发明名称 APPARATUS FOR FORMING FILM OF ATOMIC LAYERS
摘要 PROBLEM TO BE SOLVED: To improve a film-forming rate while efficiently using a gas. SOLUTION: An operation control section 120 controls an operation of a frame driving section 111 so that a pressing frame 104 moves forward toward the inside of a body 101 of the apparatus to bring a peripheral part of a substrate-mounting table 105 into a state of abutting the undersurface of the pressing frame 104. The operation control section 120 also controls an operation of the frame driving section 111 so that the pressing frame 104 retreats from the inside of the body 101 of the apparatus to bring a part of the frame into a state of being accommodated in an accommodation section 113 and the peripheral part of the substrate-mounting table 105 is thereby separated from the pressing frame 104. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009197281(A) 申请公布日期 2009.09.03
申请号 JP20080041015 申请日期 2008.02.22
申请人 MITSUI ENG & SHIPBUILD CO LTD 发明人 WASHIO YOSHIAKI
分类号 C23C16/455 主分类号 C23C16/455
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