发明名称 Method of forming a metal bump on a semiconductor device
摘要 An uppermost one of multilayered electrode pads, on which a bump and a plating coat will be formed, is made of metal having high ionization tendency, particularly, Al. On the other hand, an uppermost one of multilayered electrode pads, on which none of the bump and the plating coat will be formed, is made of metal having low ionization tendency, particularly, Cu.
申请公布号 US2009221142(A1) 申请公布日期 2009.09.03
申请号 US20090453299 申请日期 2009.05.06
申请人 PANASONIC CORPORATION 发明人 MATSUMOTO TAKESHI
分类号 H01L21/768 主分类号 H01L21/768
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