发明名称 |
METHOD OF FABRICATING A TRANSISTOR WITH SEMICONDUCTOR GATE COMBINED LOCALLY WITH A METAL |
摘要 |
<p>The invention concerns a method of forming a field effect transistor comprising a gate (G) formed on an insulating layer, the gate having, in a zone in contact with the insulating layer, a semiconducting central zone (50) and lateral zones (48) in the length of the gate (G), the method comprising forming a gate (G) comprising a portion of insulating layer (32), a portion of semiconducting layer formed over the insulating layer (32), and a portion of mask layer formed over the semiconducting layer; performing an etching of the portion of the mask layer such that only a portion in the centre of the gate (G) remains; and reacting the semiconducting gate with a metal deposited over the gate.</p> |
申请公布号 |
WO2008084085(A9) |
申请公布日期 |
2009.09.03 |
申请号 |
WO2008EP50260 |
申请日期 |
2008.01.10 |
申请人 |
STMICROELECTRONICS CROLLES 2 SAS;NXP B.V.;MUELLER, MARKUS;BIDAL, GREGORY |
发明人 |
MUELLER, MARKUS;BIDAL, GREGORY |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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