| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a CSP structure etc., superior in heat dissipation and capable of suppressing a rise in temperature of a built-in semiconductor chip. <P>SOLUTION: The semiconductor device has the semiconductor chip 21 and a plurality of solder bumps 30 and 32. One or more first solder bumps 30 are electrically connected to an electrode pad 22 of the semiconductor chip 21 through third wiring 29 and first wiring 25. One or more second solder bumps 23 are connected to second wiring 26 through fourth wiring 31. The second wiring 26 covers substantially the entire surface of the semiconductor chip 21 except the first wiring 25 and an opening portion 27 enclosing the first wiring 25, and contributes to efficient conduction of heat generated by the semiconductor chip 21 to a circuit board through the second solder bump 32. The second solder bump 32 is electrically connected to another electrode pad of the semiconductor chip 21. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
