| 摘要 |
PROBLEM TO BE SOLVED: To improve efficiency of a power supply circuit by reducing the resistance of the gate electrode of a charge transfer transistor. SOLUTION: A double wiring structure is employed by providing an auxiliary gate electrode in the gate electrodes of T1-T4, and the resistance of the gate electrodes is reduced as a whole. With regard to the T1, an auxiliary gate electrode 108 is formed to overlap the gate electrode 104. The auxiliary gate electrode 108 is connected with the gate electrode 104 on one side of the T1. More specifically, a contact hole CH1 is formed in an interlayer dielectric 107 on the gate electrode 104 extending on a glass substrate 100 on the outside of a polysilicon layer 102, and the auxiliary gate electrode 108 is electrically connected with the gate electrode 104 through the contact hole CH1. The auxiliary gate electrode 108 consists of aluminum or an aluminum alloy, for example, and has a sheet resistance lower than that of the gate electrode 104. COPYRIGHT: (C)2009,JPO&INPIT
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