| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device using an organic semiconductor material, which is made to have organic, and can control a threshold irrespective of the material of a gate insulation film, and to provide a semiconductor thin film used for the semiconductor device. SOLUTION: The semiconductor device has the gate insulation film 7 sandwiched between the organic semiconductor thin film 9 and a gate electrode 3, wherein the organic semiconductor thin film 9 includes a plurality of kinds of organic semiconductor materials exhibiting the same conductivity type characteristics. Preferably, the organic semiconductor materials forming the organic semiconductor thin film 9 includes the same main skeleton. The threshold is controlled based on the plurality of kinds of semiconductor materials forming the organic semiconductor thin film 9 and a proportion thereof. COPYRIGHT: (C)2009,JPO&INPIT
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