发明名称 Metrology of bilayer photoresist processes
摘要 A method for patterning a substrate is provided, which comprises (a) providing a substrate; (b) applying a first layer comprising a first photo resist to the substrate; (c) applying a second layer comprising a second photo resist over the first layer; (d) patterning the second layer; and (e) inspecting the patterned second layer with an inspection tool; wherein at least one of the first and second layers comprises a contrasting agent which increases the contrast between the first and second layers to the inspection tool.
申请公布号 US2009220895(A1) 申请公布日期 2009.09.03
申请号 US20080074148 申请日期 2008.02.29
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 GARZA CESAR M.;CHO SUNGSEO
分类号 G03F7/26 主分类号 G03F7/26
代理机构 代理人
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