发明名称 |
Metrology of bilayer photoresist processes |
摘要 |
A method for patterning a substrate is provided, which comprises (a) providing a substrate; (b) applying a first layer comprising a first photo resist to the substrate; (c) applying a second layer comprising a second photo resist over the first layer; (d) patterning the second layer; and (e) inspecting the patterned second layer with an inspection tool; wherein at least one of the first and second layers comprises a contrasting agent which increases the contrast between the first and second layers to the inspection tool.
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申请公布号 |
US2009220895(A1) |
申请公布日期 |
2009.09.03 |
申请号 |
US20080074148 |
申请日期 |
2008.02.29 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
GARZA CESAR M.;CHO SUNGSEO |
分类号 |
G03F7/26 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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