| 摘要 |
PROBLEM TO BE SOLVED: To attain cost reduction in an SOI substrate 1 using, so-called a smart cut method, constituted so as to perform hydrogen embrittlement on an implantation surface of hydrogen ion to obtain a single-crystal silicon thin film by implanting the hydrogen ion in a single-crystal silicon strip 6, and performing heat treatment after having stuck the single-crystal silicon strip 6 to a substrate 2. SOLUTION: Since an amorphous alkali-free glass substrate whose coefficient of thermal expansion is equal to or more than that of single-crystal silicon in a temperature range from room temperature to about 700°C, is used for a substrate 2, and since temperature of the heat treatment for enhancing adhesion force of the single-crystal silicon strip 6 to the substrate 2 may be about 300°C, the heat treatment is performed at the maximum temperature of about 600°C in addition to separation of the single-crystal silicon strip 6 into thin films. Consequently, the substrate 2 curves downward in the projecting direction, force of peeling from the end of the single-crystal silicon strip 6 matches to the curved direction, and peeling is not caused. Thus, a high distortion point alkali-free glass of reduced cost is used and throughput is improved. COPYRIGHT: (C)2009,JPO&INPIT
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