| 摘要 |
PROBLEM TO BE SOLVED: To provide a flash memory device that improves coupling ratio of a cell and method of manufacturing the same. SOLUTION: The flash memory device includes a trench which is formed on a semiconductor substrate and has a level difference on a bottom surface, a tunnel insulating film formed on an active region of the semiconductor substrate, a first conductive film formed on the tunnel insulating film, an element isolation film to be filled between the trench and a first conductive film, and a second conductive film formed by allowing a side surface thereof to be partially superimposed with the element isolation film on the first conductive film. COPYRIGHT: (C)2009,JPO&INPIT
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