ATTACHED OBJECT REMOVING METHOD AND SUBSTRATE TREATMENT METHOD

摘要

PROBLEM TO BE SOLVED: To provide an attached object removing method capable of surely removing an object attached during plasma treatment using plasma that is generated from treatment gas containing methane gas and nitrogen gas. SOLUTION: In a reactive chamber 17 to which a high frequency voltage is applied by a susceptor 12, a plurality of semiconductor wafers W in a single lot are continuously subjected to plasma etching treatment using such plasma as generated from treatment gas containing methane gas and nitrogen gas. Then, in the reactive chamber 17, a CFx+ion, O-ion, an H*radical, an F*radical, and an O*radical are generated from a mixture gas containing oxygen gas and CHF3gas. COPYRIGHT: (C)2009,JPO&INPIT