发明名称 |
PATTERN FORMING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME |
摘要 |
The pattern forming method includes forming a catalyst film on a base layer having an uneven surface, wherein the catalyst layer is formed along the uneven surface of the base layer; forming a coating film by coating a fluid material on the catalyst film; forming an insoluble layer which is insoluble in a solvent in the coating film by reacting the coating film along the catalyst film; and maintaining the insoluble layer by removing an unreacted portion of the coating film by using the solvent.
|
申请公布号 |
US2009220898(A1) |
申请公布日期 |
2009.09.03 |
申请号 |
US20090391679 |
申请日期 |
2009.02.24 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
MITSUOKA KAZUYUKI;MURAMATSU MAKOTO;IWASHITA MITSUAKI |
分类号 |
G03F7/20;B05D3/10;B05D5/12 |
主分类号 |
G03F7/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|