发明名称 PATTERN FORMING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME
摘要 The pattern forming method includes forming a catalyst film on a base layer having an uneven surface, wherein the catalyst layer is formed along the uneven surface of the base layer; forming a coating film by coating a fluid material on the catalyst film; forming an insoluble layer which is insoluble in a solvent in the coating film by reacting the coating film along the catalyst film; and maintaining the insoluble layer by removing an unreacted portion of the coating film by using the solvent.
申请公布号 US2009220898(A1) 申请公布日期 2009.09.03
申请号 US20090391679 申请日期 2009.02.24
申请人 TOKYO ELECTRON LIMITED 发明人 MITSUOKA KAZUYUKI;MURAMATSU MAKOTO;IWASHITA MITSUAKI
分类号 G03F7/20;B05D3/10;B05D5/12 主分类号 G03F7/20
代理机构 代理人
主权项
地址