ELECTRICAL ERASABLE PROGRAMMABLE MEMORY TRANSCONDUCTANCE TESTING

摘要

A test method determines if an array (103) of a Flash EEPROM circuit (101) has a bit cell (105, 107, 109, 111) with a transconductance (gm) that is deficient. The method preconditions all bit cells (403, 405, 407) of the array to a particular programmed state and then determines whether any of the bit cells exhibit undesirable operating characteristics by reading (411) each bit cell to determine (413) whether its transconductance is less than desirable.