发明名称 |
Apparatus and Method for Determining a Memory State of a Resistive N-Level Memory Cell and Memory Device |
摘要 |
A determination of the memory state of a resistive n-level memory cell is described. The determination includes charging or discharging a read capacity of the memory cell by applying a voltage between a first electrode and a second electrode of the resistive memory cell. A voltage at the second electrode is compared to a reference voltage to obtain a comparison signal. The comparison signal is sampled at, at least, (n-1) time instants during the charge or discharge of the read capacity to obtain sampling values. The memory state of the memory cell can be determined based upon the sampling values. |
申请公布号 |
US2009219756(A1) |
申请公布日期 |
2009.09.03 |
申请号 |
US20080039633 |
申请日期 |
2008.02.28 |
申请人 |
SCHROEGMEIER PETER;DIETRICH STEFAN |
发明人 |
SCHROEGMEIER PETER;DIETRICH STEFAN |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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