| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory element which exhibits excellent thermal stability. SOLUTION: A nonvolatile memory element comprises a semiconductor region 11, a source region 12 and a drain region 13 provided in the semiconductor region 11 separated from each other, a tunnel insulating film 14 formed on the semiconductor region 11 between the source region 12 and the drain region 13, a charge storage layer 15 formed on the tunnel insulating film 14, a block insulating film 16 formed on the charge storage layer 15, and a control gate electrode 17 provided on the block insulating film 16. The charge storage layer 15 includes an oxide, a nitride or an oxynitride which contains at least one of Hf, Al, Zr, Ti, or a rare earth metal and is crystallized entirely or partially. The block insulating film 16 includes an oxide, an oxynitride, silicate or aluminate which contains at least one rare earth metal. COPYRIGHT: (C)2009,JPO&INPIT
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