| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology which does not require the initial setting of a reference cell in an MRAM. SOLUTION: A magnetic random access memory 10 comprises a memory cell MC, and a reference cell RC which is referred to at the time of reading out data in order to generate a reference level. The memory cell MC includes a first reluctance element 100 having a resistance switched between first and second values. On the other hand, the reference cell RC includes a second reluctance element 150 having a resistance fixed to a third value between the first and second values. COPYRIGHT: (C)2009,JPO&INPIT |
