发明名称 |
SEMICONDUCTOR DEVICE INCLUDING MOS FIELD EFFECT TRANSISTOR HAVING OFFSET SPACERS OR GATE SIDEWALL FILMS ON EITHER SIDE OF GATE ELECTRODE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
First and second impurity doped regions are formed in a semiconductor substrate. A first gate electrode is formed on the first impurity doped region with a first gate insulation film interposed therebetween. A second gate electrode is formed on the second impurity doped region with a second gate insulation film interposed therebetween. A first sidewall insulation film is formed on either side of the first gate electrode. A second sidewall insulation film has a thickness different from that of the first sidewall insulation film and are formed on either side of the second gate electrode. A third sidewall insulation film is formed on the first sidewall insulation film on the side of the first gate electrode. A fourth sidewall insulation films have a thickness different from that of the third sidewall, insulation film and are formed on the second sidewall insulation film on the side of the second gate electrode.
|
申请公布号 |
US2009218630(A1) |
申请公布日期 |
2009.09.03 |
申请号 |
US20090434200 |
申请日期 |
2009.05.01 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TSUNO HITOSHI |
分类号 |
H01L27/088;H01L27/092;H01L21/336;H01L21/8238;H01L29/78 |
主分类号 |
H01L27/088 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|