<p>Edges of a first conductive layer (104) and a silicate glass layer (106) extend adjacent one another along a via (164) extending to a semiconductor substrate (41). An electrical conductor (112/114) extends through the via (164) into contact with the semiconductor substrate (41).</p>
申请公布号
WO2009108201(A1)
申请公布日期
2009.09.03
申请号
WO2008US55395
申请日期
2008.02.28
申请人
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;BURTON, GREGORY, N.;MIKULAN, PAUL, I.
