| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric converter which can detect infrared rays and is highly reliable. <P>SOLUTION: A photoelectric converter 100 comprises a plurality of photoelectric conversion elements 50, arranged in a matrix form, on a substrate 1 and converting incident light into a signal, wherein the photoelectric conversion element 50 consists of a thin-film transistor 10 formed on the substrate 1, and a photodiode 20 formed on the thin-film transistor 10 and connected electrically to the transistor 10. The photodiode 20 is provided wtih a first impurity layer 21, a second impurity layer 23 and an intrinsic semiconductor layer 22, sandwiched in between the first and second impurity layers 21 and 23; and the intrinsic semiconductor layer 22 is formed of microcrystalline silicon at least on the incident side of detection light. <P>COPYRIGHT: (C)2009,JPO&INPIT |
