NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor device having an electrode with low contact resistance, the electrode being formed on a backside of a nitride semiconductor device, and to provide a method of manufacturing the same.

SOLUTION: The nitride semiconductor device 1 includes a substrate 2, and an n-type clad layer 3 to a p-type contact layer 9 formed as nitride semiconductor layers on an upper surface of the substrate 2. The substrate 2 has a hemispherical projection portion 13 formed on the backside 14 on the opposite side from the upper surface where the nitride semiconductor layers are formed by removing a processing deterioration layer on the backside 14. The nitride semiconductor device 1 further has an electrode 12 formed so as to be in contact with the projection portion 13.

COPYRIGHT: (C)2009,JPO&INPIT