发明名称 ELECTRON BEAM LITHOGRAPHY APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide an electron beam lithography apparatus capable of easily and inexpensively correcting errors in X and Y directions of drawing positions which fluctuate owing to movement of a stage in a Z direction. <P>SOLUTION: The electron beam lithography apparatus includes a stage capable of being driven in X, Y, and Z directions, an X and Y direction measuring means for detecting positional data of the stage, a Z direction measuring means capable of measuring the height of the surface of a mask, and a correction value calculating means. The correction value calculating means stores, as parameters, numeric data indicating conversion coefficients or differences to make a drawing coordinate system defined by the X-Y direction measuring means consistent with the other reference coordinate system and uses these parameters to calculate a value to correct the quantity of deflection of the electron beam for correcting the drawing coordinate system according to the numeric data indicating the conversion coefficients or differences upon drawing. When the stage is driven in the Z direction, the correction value calculating means changes the parameters and calculates the correction value according to the height of the stage. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009200147(A) 申请公布日期 2009.09.03
申请号 JP20080038600 申请日期 2008.02.20
申请人 NUFLARE TECHNOLOGY INC 发明人 YOSHITAKE HIDESUKE;TAMAMUSHI SHUICHI
分类号 H01L21/027;H01J37/305 主分类号 H01L21/027
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