| 摘要 |
A silicon substrate is manufactured from single-crystal silicon which is grown to have a carbon concentration equal to or higher than 1.0x1016 atoms/cm3 and equal to or lower than 1.6x1017 atoms/cm3 and an initial oxygen concentration equal to or higher than 1.4x1018 atoms/cm3 and equal to or lower than 1.6x1018 atoms/cm3 by a CZ method. A device is formed on a front, the thickness of the silicon substrate is equal to or more than 5 mum and equal to or less than 40 mum, and extrinsic gettering which produces residual stress equal to or more than 5 Mpa and equal to or less than 200 Mpa is applied to a back face of the substrate.
|
