| 发明名称 |
SEMICONDUCTOR COMPONENT WITH A DRIFT REGION AND A DRIFT CONTROL REGION |
| 摘要 |
A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region. |
| 申请公布号 |
US2009218621(A1) |
申请公布日期 |
2009.09.03 |
| 申请号 |
US20060996906 |
申请日期 |
2006.07.27 |
| 申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
PFIRSCH FRANK;MAUDER ANTON;WILLMEROTH ARMIN;SCHULZE HANS-JOACHIM;SEDLMAIER STEFAN;ZUNDEL MARKUS;HIRLER FRANZ;MITTAL ARUNJAI |
| 分类号 |
H01L29/78;H01L27/06;H01L29/739 |
主分类号 |
H01L29/78 |
| 代理机构 |
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