SEMICONDUCTOR DEVICE HAVING ELECTRODE PAD AND RADIO CIRCUIT APPARATUS COMPRISING THE SEMICONDUCTOR DEVICE

摘要

Disclosed is a semiconductor device comprising a multilayer region (104) formed in a semiconductor substrate (101) of a first conductivity type, and an electrode pad (106) formed on the semiconductor substrate at a position above the multilayer region through an interlayer insulating film (105). The multilayer region includes a first impurity diffusion region (102), a second impurity diffusion region (103) formed on the first impurity diffusion region, and a third impurity diffusion region (102x) which is so formed on the first impurity diffusion region as to surround the second impurity diffusion region. The first impurity diffusion region and the third impurity diffusion region are of a second conductivity type, and the second impurity diffusion region is of the first conductivity type. The impurity concentration of the third impurity diffusion region is higher than that of the first impurity diffusion region, and the third impurity diffusion region is electrically connected with a terminal which is fixed at a constant potential.