| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ZnO-based semiconductor element that becomes an electronic device of good quality, which is not affected by conditions of a manufacturing stage. <P>SOLUTION: An acceptor doped layer or/and an active function layer among thin films constituting the ZnO-based semiconductor element is/are not formed of ZnO alone, but formed of a Zn-based compound containing ZnO and other elements. An unnecessary light emission level is eliminated when the layer(s) is formed of the ZnO-based compound other than ZnO alone, so that optimization is facilitated and an allowed range of growth conditions is wide, thereby obtaining a suitable device material. <P>COPYRIGHT: (C)2009,JPO&INPIT |
