MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide semiconductor device which can improve reliability; and a silicon carbide semiconductor device. SOLUTION: This manufacturing method of a silicon carbide semiconductor device includes the following processes of: first preparing a silicon carbide semiconductor layer 110 including a principal surface 110a; doping silicon in the principal surface 110a of the silicon carbide semiconductor layer 110 to form a high-concentration region 115 high in silicon concentration relative to a region without doping silicon in the silicon carbide semiconductor layer 110; forming metal layers 143 and 144 containing a material producing a compound with silicon at positions in contact with the high-concentration region 115; and heat-treating the metal layers 143 and 144 to form electrodes containing the compound. COPYRIGHT: (C)2009,JPO&INPIT