发明名称 |
SOI DEVICES AND METHODS FOR FABRICATING THE SAME |
摘要 |
Silicon on insulator (SOI) devices and methods for fabricating the same are provided. An exemplary embodiment of a SOI device comprises a substrate. A first insulating layer is formed over the substrate. A plurality of semiconductor islands is formed over the first insulating layer, wherein the semiconductor islands are isolated from each other. A second insulating layer is formed over the first insulating layer, protruding over the semiconductor islands and surrounding thereof. At least one recess is formed in a portion of the second insulating layer adjacent to a pair of the semiconductor islands. A first dielectric layer is formed on a portion of each of the semiconductor islands. A conductive layer is formed over the first dielectric layer and over the second insulating layer exposed by the recess. A pair of source/drain regions is oppositely formed in portions of each of the semiconductor islands not covered by the first dielectric layer and the conductive layer.
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申请公布号 |
US2009218623(A1) |
申请公布日期 |
2009.09.03 |
申请号 |
US20090468137 |
申请日期 |
2009.05.19 |
申请人 |
CHENG CHUNG-LONG;THEI KONG-BENG;CHUNG SHENG-CHEN;LEE TZUNG-CHI;CHUANG HARRY |
发明人 |
CHENG CHUNG-LONG;THEI KONG-BENG;CHUNG SHENG-CHEN;LEE TZUNG-CHI;CHUANG HARRY |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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