发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To solve a problem that cracks or the like are generated because stress is applied to the front surface side of a semiconductor chip located under a bump resulting from a load applied to the bump. <P>SOLUTION: A conductive pattern (27) is formed on the front surface of a substrate (10). The bump (11) is electrically connected to the conductive pattern. The bump has a shape extended to a side area at the upper part of the conductive pattern. A buffering layer (30) formed of an organic material is arranged between a part extended to the side area of the bump and the conductive pattern. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009200132(A) 申请公布日期 2009.09.03
申请号 JP20080038204 申请日期 2008.02.20
申请人 FUJITSU LTD 发明人 TANI MOTOAKI;IIJIMA SHINYA
分类号 H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址