| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein thermal diffusion of impurities in a P-type well implantation layer and an N-type well implantation layer is suppressed and a PN isolation width is made small, and to provide its manufacturing method. <P>SOLUTION: The semiconductor device 101 is provided with a P-type well area 6a, an N-type well area 7a and a well isolation area 20 on a substrate 1. An element isolation groove 4a is provided in the P-type well area 6a and the N-type well area 7a, and a divided active area 4b is formed. A P-type well implantation layer 6 is formed in the P-type well area 6a, an N-type well implantation layer 7 is formed in the N-type well area 7a, and a well isolation groove 4c is provided in the well isolation area 20. An impurity diffusion preventive layer 8 is formed under the bottom 22c of the well isolation groove 4c, and the P-type well implantation layer 6 and the N-type well implantation layer 7 are formed deeper than the element isolation groove 4a and shallower than the well isolation groove 4c. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
