| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an ESD protection circuit for preventing a semiconductor device from being destructed by electrostatic discharge, which includes high immunity to ESD destruction without increasing a chip area of the semiconductor device. <P>SOLUTION: The diode-type ESD protection circuit formed of a junction between a first conductivity type diffusion layer and a second conductivity type diffusion layer is formed in an entire peripheral region or a part of the peripheral region outside of internal circuit of the chip and bonding pads, and a diffusion layer formed to fix a substrate potential of the chip and electrically connected to a power source or a ground provided in the peripheral region of the chip is used for any one of the first conductivity type diffusion layer and the second conductivity type diffusion layer, thereby permitting enlargement of the size of the ESD protection circuit without increasing a chip area, and enhancing immunity to ESD destruction of the semiconductor device. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
