| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having channel regions of an identical conductive type, as well as, a plurality of semiconductor elements with different threshold voltages. SOLUTION: In a semiconductor device in which two transistors with different threshold voltages are formed on one and the same semiconductor substrate, the gate electrode of the transistor includes a gate insulating film formed on the semiconductor substrate and a metal layer, including a second metal formed on the gate insulating film and including a first metal as its principal component, and further, one of the transistors includes a second metal oxide film between the gate insulating film and the metal layer. COPYRIGHT: (C)2009,JPO&INPIT
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