发明名称 Film-Formation Method and Manufacturing Method of Light-Emitting Device
摘要 A film-formation method whereby a minute pattern thin film can be formed on a deposition substrate, without provision of a mask between a material and the deposition substrate. Moreover, a light-emitting element is formed by such a film-formation method, and a high-definition light-emitting device can be manufactured. Through a film-formation substrate in which a reflective layer, a light-absorbing layer and a material layer are formed, the light-absorbing layer is irradiated with light, so that a material contained in the material layer is deposited on a deposition substrate which is disposed to face the film-formation substrate. Since the reflective layer is selectively formed, a film to be deposited on the deposition substrate can be selectively formed with a minute pattern reflecting the pattern of the reflective layer. A wet process can be employed for formation of the material layer.
申请公布号 US2009220706(A1) 申请公布日期 2009.09.03
申请号 US20090391840 申请日期 2009.02.24
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;IBE TAKAHIRO;TSURUME TAKUYA;TANAKA KOICHIRO;SEO SATOSHI
分类号 C23C14/28 主分类号 C23C14/28
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