ZnO BASED SEMICONDUCTOR DEVICE, ITS MANUFACTURE METHOD AND OPTICAL SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a new ZnO based semiconductor device with improved moisture-proof.

SOLUTION: The ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing the ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing the ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn-Si-O layer containing the compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure.

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