| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a solid-state imaging element by which a light shield film is prevented from being exposed and a deep in-layer lens portion useful for reduction of smears can be formed without making manufacturing processes complicated. SOLUTION: The manufacturing method of the solid-state imaging element includes a first process of forming a transfer electrode 153 for transferring signal charges to a peripheral position of a pixel portion, a second process of forming the light shield film 155 covering the transfer electrode, a third process of forming an inter-layer insulating film 156 covering the pixel portion and light shield film, a fourth process of forming a metal layer 157 so that the inter-layer insulating film is covered, the metal layer 157 being used to form predetermined metal wiring after the third step, a fifth process of etching away unnecessary parts of the metal layer after the fourth process, and a sixth process of forming a flattening layer 158 including the inter-layer lens portion 158a after the fifth process, wherein the metal layer formed in the fourth process has a thickness Ta which is thinner at a part opposed to a photoelectric conversion element than at other parts. COPYRIGHT: (C)2009,JPO&INPIT
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