| 摘要 |
PROBLEM TO BE SOLVED: To provide a film formation method of zinc oxide thin film capable of forming a film having satisfactory crystallinity to a large area at a high film formation speed, and a zinc oxide thin film formed by the method. SOLUTION: A high-density plasma beam PB by an arc discharge is supplied toward a material for vapor deposition composed, as a principal component, of zinc oxide loaded in a hearth 51 arranged as an anode as a film-formation chamber to evaporate and ionize a material for vapor deposition and to make the material for vapor deposition adhere on the surface of a substrate W arranged opposite to the material for vapor deposition, and thereby the thin film is obtained. At that time, the upper magnetic field in proximity to the hearth 51 is controlled by a magnetic field control member disposed around the hearth 51, and also, a voltage is applied to the hearth 51 such that a potential of +30 to +60V is obtained with respect to a vacuum vessel 10. COPYRIGHT: (C)2009,JPO&INPIT
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