QUARTZ CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THE QUARTZ CRUCIBLE

摘要

Provided is a quartz crucible composed of a quartz glass for pulling a silicon single crystal having a double layer structure of an outer layer and an inner layer. In the cross-sectional view of the crucible, the inner layer has a wave-like inner surface shape having protruding sections and recessed sections at least between a start position and an end position of a silicon melt surface in silicon single crystal pulling. When a distance between an upper end of an opening of the crucible and the start position in silicon single crystal puling is 100, only a crucible portion from the upper end of the opening to a position within a range of 40-100 is crystalline.