发明名称 |
BILAYER METAL CAPPING LAYER FOR INTERCONNECT APPLICATIONS |
摘要 |
<p>The invention provides semiconductor interconnect structures that have improved reliability and technology extendibility. In the present invention, a second metallic capping layer (76) is located on a surface of a first metallic cap layer (60) which is, in turn, located on a surface of the conductive feature (58) embedded within a first dielectric material (54). Both the first and second metallic capping layers are located beneath an opening, e.g., a via opening, which is present within an overlying second dielectric material (68). The second metallic capping layer protects the first dielectric capping layer from being removed (either completely or partially) during subsequent processing steps. Interconnect structures including via gouging features as well as non-via gouging features are disclosed. The present invention provides methods of fabricating such semiconductor interconnect structures.</p> |
申请公布号 |
WO2009106520(A1) |
申请公布日期 |
2009.09.03 |
申请号 |
WO2009EP52160 |
申请日期 |
2009.02.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;NITTA, SATYANARAYANA, VENKATA;YANG, CHIH-CHAO |
发明人 |
NITTA, SATYANARAYANA, VENKATA;YANG, CHIH-CHAO |
分类号 |
H01L21/768;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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