| 摘要 |
PROBLEM TO BE SOLVED: To deposit a thin film under an environment with extremely little water and oxygen, to form a high-dielectric insulating thin film and a silicon epitaxial film and to maximally reduce water that remains as impurities in the film. SOLUTION: An atmosphere gas for which the water concentration in the gas is controlled to be 1 PPB or lower, and the oxygen concentration is controlled to be 10<SP>-21</SP>Pa or lower by an extremely low water molecule/oxygen molecule discharging apparatus 204 is made to flow into a reaction chamber, dehydration and deoxidation treatment inside the reaction chamber is performed, and the water partial pressure inside the reaction chamber is set to 10<SP>-10</SP>Pa or lower. A raw material gas is introduced thereafter, and the thin film is deposited on a wafer 203, under the extremely low moisture and oxygen partial pressure for which a moisture content is equal to or lower than 1 PPB and an oxygen partial pressure is 10<SP>-21</SP>Pa or the lower. COPYRIGHT: (C)2009,JPO&INPIT |
