发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
The plasma processing apparatus has a beam-shaped spacer 7 placed at the upper opening of the chamber 3 opposed to the substrate 2. The beam-shaped spacer 7 has an annular outer peripheral portion 7a whose lower surface 7d is supported by the chamber 3, a central portion 7b located at the center of a region surrounded by the outer peripheral portion 7a in plane view, and a plurality of beam portions 7c extending radially from the central portion 7b to the outer peripheral portion 7a. An entire of a dielectric plate 8 is uniformly supported by the beam-shaped spacer 7. The dielectric plate 8 can be reduces in thickness while securing a mechanical strength for supporting the atmospheric pressure when the chamber 3 is internally reduced in pressure.
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申请公布号 |
US2009218045(A1) |
申请公布日期 |
2009.09.03 |
申请号 |
US20060092381 |
申请日期 |
2006.11.01 |
申请人 |
HIROSHIMA MITSURU;ASAKURA HIROMI;WATANABE SYOUZOU;OKUNE MITSUHIRO;SUZUKI HIROYUKI;HOUCHIN RYUZOU |
发明人 |
HIROSHIMA MITSURU;ASAKURA HIROMI;WATANABE SYOUZOU;OKUNE MITSUHIRO;SUZUKI HIROYUKI;HOUCHIN RYUZOU |
分类号 |
C23F1/08;C23C16/54 |
主分类号 |
C23F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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