发明名称 |
WIDE BAND-GAP NANOSTRUCTURES |
摘要 |
<p>A light emitting or detecting device (41) with a substrate (44) with a surface, an array of elongate nanostructures (42) having a first end supported by the substrate (44), and a second free end projecting away from the surface; a thin insulating layer (45) formed on the surface and about the nanostructures, the insulating layer being arranged so that a substantial portion (47) of the nanostructures (42) extend through the insulating layer (45). The device allows for greater contact between the nanostructures (42) and a p-type layer (46) above the insulator and surrounding the nanostructures improving the efficiency of the device. One suitable material is ZnO.</p> |
申请公布号 |
WO2009106636(A1) |
申请公布日期 |
2009.09.03 |
申请号 |
WO2009EP52417 |
申请日期 |
2009.02.27 |
申请人 |
DUBLIN CITY UNIVERSITY;MCGLYNN, ENDA;THANGAVELU, RAJENDRA KUMAR RAMASAMY |
发明人 |
MCGLYNN, ENDA;THANGAVELU, RAJENDRA KUMAR RAMASAMY |
分类号 |
H01L33/08;H01L33/28;H01L33/44 |
主分类号 |
H01L33/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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