发明名称 WIDE BAND-GAP NANOSTRUCTURES
摘要 <p>A light emitting or detecting device (41) with a substrate (44) with a surface, an array of elongate nanostructures (42) having a first end supported by the substrate (44), and a second free end projecting away from the surface; a thin insulating layer (45) formed on the surface and about the nanostructures, the insulating layer being arranged so that a substantial portion (47) of the nanostructures (42) extend through the insulating layer (45). The device allows for greater contact between the nanostructures (42) and a p-type layer (46) above the insulator and surrounding the nanostructures improving the efficiency of the device. One suitable material is ZnO.</p>
申请公布号 WO2009106636(A1) 申请公布日期 2009.09.03
申请号 WO2009EP52417 申请日期 2009.02.27
申请人 DUBLIN CITY UNIVERSITY;MCGLYNN, ENDA;THANGAVELU, RAJENDRA KUMAR RAMASAMY 发明人 MCGLYNN, ENDA;THANGAVELU, RAJENDRA KUMAR RAMASAMY
分类号 H01L33/08;H01L33/28;H01L33/44 主分类号 H01L33/08
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