| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device in which the cause of a deviation in pattern size can be easily specified, and a manufacturing device for the semiconductor device. <P>SOLUTION: The manufacturing method for the semiconductor device includes the steps of: carrying out resist coating and exposure on a plurality of first selected substrates, carrying out heating and development on a plurality of heat-treated plates, and measuring respective resist sizes; primarily correcting set temperatures for the respective heat-treated plates on the basis of the measurement results; performing resist coating and exposure on a plurality of second selected substrates, carrying out heating, development and etching on a plurality of heat-treated plates, and measuring etching respective pattern sizes; and secondarily correcting the set temperatures for the respective heat-treated plates on the basis of the measurement results. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
