| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of plasma-etching a feature part in a carbonaceous layer with an etchant gas mixture including molecular oxygen (O<SB>2</SB>) and gas including a carbon sulfur terminal ligand. SOLUTION: A high RF frequency source is employed in certain embodiments to achieve a high etch rate with high selectivity to inorganic dielectric layers. In certain embodiments, the etchant gas mixture includes only the two components, COS and O<SB>2</SB>, but in other embodiments additional gases, such as at least one of molecular nitrogen (N<SB>2</SB>), carbon monoxide (CO) and carbon dioxide (CO<SB>2</SB>) can be further employed to perform etching on carbonaceous layers. COPYRIGHT: (C)2009,JPO&INPIT
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