发明名称 |
METHOD FOR EVALUATING PHOTOMASK DEFECT TRANSFER CHARACTERISTIC, AND PHOTOMASK |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for evaluating photomask defect transfer characteristics with higher accuracy by which an error component generated by exposure in a plurality of times can be eliminated in the evaluation of pattern defect transfer characteristics of a photomask to be used for multiple exposure techniques, by use of a lithography simulation microscopy. <P>SOLUTION: The method for evaluating photomask defect transfer characteristics of a photomask aims evaluation of a photomask to be used for multiple exposure techniques of subjecting the same pattern of the same photomask to exposure a plurality of times under a plurality of different irradiation conditions so as to form a single transfer pattern on a wafer. Upon evaluating the defect transfer characteristics of the photomask by using a lithography simulation microscope, the photomask pattern is subjected to exposure only once under one compounded irradiation conditions by adding the a plurality of different irradiation conditions to obtain a transferred image of the pattern, and the mask pattern is determined as acceptable or not by the intensity of light and/or values of CD (critical dimension) in a defective portion of the transferred image. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009198737(A) |
申请公布日期 |
2009.09.03 |
申请号 |
JP20080039537 |
申请日期 |
2008.02.21 |
申请人 |
DAINIPPON PRINTING CO LTD |
发明人 |
SUDO TAKANORI;NAGAI TAKAHARU;INAZUKI YUICHI;TOYAMA NOBUTO;MORIKAWA YASUTAKA |
分类号 |
G03F1/84;G03F7/20;H01L21/027 |
主分类号 |
G03F1/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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