发明名称 HEAT TREATING METHOD OF PLATING LAYER
摘要 PROBLEM TO BE SOLVED: To provide a heat treating method by which the generation and the growth of whisker is suppressed without deteriorating the solderability and the contact reliability. SOLUTION: The whisker is inhibited by taking-off the distortion or defect of a structure by heat treatment which occurs in an electrodeposition structure in the formation of the plating layer and causes the generation of the whisker. The distortion or the defect is caused by the planar or spacial disarrangement of the crystal structure and is taken-off by rearranging atoms in order. The heat treatment is made effective for the inhibition of whisker equal to a reflow treatment by controlling the temperature to be near the melting point of a plating material as the maximum and the surface smoothness of the plating layer is kept without being melted because the time to be kept at the temperature equal to the melting point of the plating layer is shorter than the time when the melting of the plating material is started. The use of far infrared ray as a heat source performs the aim further effectively because the plating material is heated from the inside. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009197280(A) 申请公布日期 2009.09.03
申请号 JP20080040863 申请日期 2008.02.22
申请人 JST MFG CO LTD 发明人 KUSUDA TAKAYASU;TAKEHIRA KAZUHIRO
分类号 C25D5/50;C25D7/00;H01R13/03 主分类号 C25D5/50
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