发明名称 |
Nitride semiconductor light emitting device and method of frabicating nitride semiconductor laser device |
摘要 |
There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride.
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申请公布号 |
US2009218593(A1) |
申请公布日期 |
2009.09.03 |
申请号 |
US20090382530 |
申请日期 |
2009.03.18 |
申请人 |
KAMIKAWA TAKESHI;KAWAGUCHI YOSHINOBU |
发明人 |
KAMIKAWA TAKESHI;KAWAGUCHI YOSHINOBU |
分类号 |
C23C14/06;H01L21/318;H01S5/343 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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