发明名称 |
METHOD FOR FORMING A TITANIUM-CONTAINING LAYER ON A SUBSTRATE USING AN ATOMIC LAYER DEPOSITION (ALD) PROCESS |
摘要 |
<p>A method for forming a titanium-containing layer on a substrate, the method comprising at least the steps of: a) providing a vapor comprising at least one precursor compound of the formula Ti(Me5Cp)(OR)3 (I), wherein R is selected in the group consisting in methyl, ethyl, isopropyl; or of the formula Ti(R1Cp)(OR2)3 (II), wherein R1 is selected from the group consisting in H, methyl, ethyl, isopropyl and R2 is independently selected from the group consisting in methyl, ethyl, isopropyl or tert- butyl; b) reacting the vapor comprising the at least one compound of formula (I) or (II) with the substrate, according to an atomic layer deposition process, to form a layer of a tantalum-containing complex on at least one surface of said substrate.</p> |
申请公布号 |
WO2009106433(A1) |
申请公布日期 |
2009.09.03 |
申请号 |
WO2009EP51683 |
申请日期 |
2009.02.13 |
申请人 |
L'AIR LIQUIDE SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE;GATINEAU, SATOKO;DUSSARRAT, CHRISTIAN;LACHAUD, CHRISTOPHE;BLASCO, NICOLAS;PINCHART, AUDREY;WANG, ZIYUN;GIRARD, JEAN-MARC |
发明人 |
GATINEAU, SATOKO;DUSSARRAT, CHRISTIAN;LACHAUD, CHRISTOPHE;BLASCO, NICOLAS;PINCHART, AUDREY;WANG, ZIYUN;GIRARD, JEAN-MARC |
分类号 |
C07F17/00;C23C12/00;C23C16/40;C23C16/455 |
主分类号 |
C07F17/00 |
代理机构 |
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