发明名称 |
METHOD FOR THE SIMULTANEOUS GRINDING OF A PLURALITY OF SEMICONDUCTOR WAFERS |
摘要 |
A method for polishing the both sides of semiconductor wafers is provided to achieve the reliability and profitability by preventing the surface roughness or the excessive damage of the processing semiconductor wafer. A plurality of carriers(13) is comprised to rotate each semiconductor wafer(15) by a rolling apparatus. The semiconductor wafer is processed to the ingredient omission mode between a temporary disk(1) of two rotating ring shapes. Each temporary disk comprises a work layer(11) containing the junction abrasive. The range of working gap(30) is provisionally defined. The maximum overrun at the radial direction is 0% to 20% of the semiconductor wafer diameter.
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申请公布号 |
KR20090094060(A) |
申请公布日期 |
2009.09.03 |
申请号 |
KR20090074728 |
申请日期 |
2009.08.13 |
申请人 |
SILTRONIC AG;PETER WOLTERS GMBH |
发明人 |
PIETSCH GEORG;KERSTAN MICHAEL;SPRING HEIKO AUS DEM |
分类号 |
H01L21/304;B24B37/08;B24B37/12;B24B37/28 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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