METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method of manufacturing semiconductor device is provided to form a gate as the thick thickness of a liner nitride film by forming the liner nitride film before forming the gate. The semiconductor substrate(100) is etched and to form pillar type active pattern. The gate conductive film(108) is formed in order to fill the space between bottom parts of the pillar type active pattern. The liner insulating layer is formed on the gate conductive film and the top end portion of the pillar type active pattern. The liner insulating layer and gate conductive film are etched to form the gate(G) in the sidewall of the bottom part of the pillar type active pattern. The insulating layer(114) is formed to cover the top portion of the pillar type active pattern including the gate. The insulating layer and the semiconductor substrate region formed between the pillar type active patterns are etched to form the trench(T).