发明名称 BARRIER FILM FOR FLEXIBLE COPPER SUBSTRATE AND SPUTTERING TARGET FOR FORMING BARRIER FILM
摘要 <p>Provided are a barrier film for a flexible copper substrate comprising a Co-Cr alloy film containing 5 to 30wt% of Cr and a balance of unavoidable impurities and Co, having a film thickness of 3 to 150nm, and film thickness uniformity of 10% or less at 1Ã; and a sputtering target for forming a barrier film comprising a Co-Cr alloy containing 5 to 30wt% of Cr and a balance of unavoidable impurities and Co, wherein the relative magnetic permeability in the in-plane direction of the sputtered face is 100 or less. The barrier film for a flexible copper substrate and the sputtering target for forming such barrier film have a film thickness that is thin enough to prevent film peeling in inhibiting the diffusion of copper to a resin film such as polyimide, is capable of obtaining a sufficient barrier effect even in a minute wiring pitch, and have barrier characteristics that will not change even when the temperature rises due to heat treatment or the like.</p>
申请公布号 EP1785505(B1) 申请公布日期 2009.09.02
申请号 EP20050766136 申请日期 2005.07.25
申请人 NIPPON MINING & METALS CO., LTD. 发明人 IRUMATA, S.;YAMAKOSHI, Y.
分类号 C22C19/07;C23C14/14;C23C14/16;C23C14/34;H05K3/16;H05K3/38 主分类号 C22C19/07
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