摘要 |
The system (S) has a semiconductor laser diode (1) emitting a laser radiation of wavelengths (L11, L12), and another semiconductor laser diode (3) emitting another laser radiation of wavelengths (L21, L22), which is different from the former wavelength. A detector device (D) detects electromagnetic radiation of the wavelengths, where the laser radiations are emitted at an infrared spectral range. The semiconductor laser diodes have two active zones (11, 12), which are stacked together. The two wavelengths have a value between 800 nanometers (nm) and 1000 nm. |