| 摘要 |
A method of using hydrostatic pressure to form copper word lines and/or a copper ground plane about parallel-aligned forming wires to form a plated wire tunnel structure. The copper word lines and the adhesively coated opposing faces of the plastic films to which they are bonded are firmly and compressively formed about the forming wires with the interstitial portions of such plastic films brought into contact to form one physical structure. After curing, the forming wires are removed from the sandwiched construction forming the tunnels into which respectively associated plated wire memory elements are inserted.
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